• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    SUMMARY OF THE INVENTION An object of the present invention is to provide a ceramic heater for a semiconductor manufacturing apparatus capable of preventing damage due to a short circuit between resistance heating elements during heat treatment while maintaining crackability of the wafer surface by optimizing the distance between wirings of the resistance heating elements. It is. The ceramic heater for a semiconductor manufacturing apparatus which has the resistance heating body 3a in the surface or the inside of the ceramic substrate 2, The minimum angle ((theta) which the bottom surface and side surface of the resistance heating body 3a make in the cross section of the resistance heating body 3a. ) Is 5 ° or more. In the ceramic heater, a plasma electrode may be further disposed on the surface or inside of the ceramic substrate 2a. In addition, the ceramic substrate 2a is preferably one kind selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
    公开号:KR20040070293A
    申请号:KR10-2004-7010329
    申请日:2003-03-20
    公开日:2004-08-06
    发明作者:가찌요시후미；구이비라아끼라；나까따히로히꼬
    申请人:스미토모덴키고교가부시키가이샤；
    IPC主号:
    专利说明:

    Ceramic Heater for Semiconductor Manufacturing Equipment {CERAMICS HEATER FOR SEMICONDUCTOR PRODUCTION SYSTEM}
    [2] DESCRIPTION OF RELATED ART Conventionally, the various structure is proposed regarding the ceramic heater used for a semiconductor manufacturing apparatus. For example, Japanese Patent Application Laid-open No. Hei 6-28258 discloses a hermetic sealing element between a ceramic heater installed in a container and embedded in a container, and a surface other than the wafer heating surface of the heater, to form an airtight seal between the reaction container. A semiconductor wafer heating apparatus having a convex support member is proposed.
    [3] In addition, in recent years, in order to reduce manufacturing cost, the outer diameter of the wafer has been large-sized to 8 inches to 12 inches, whereby the ceramic heater holding the wafer also has a diameter of 300 mm or more. At the same time, when the wafer is placed in a ceramic heater and energized and heated by a resistive heating element, variations in the wafer surface temperature, that is, cracking of the wafer surface, are required to be ± 1.0% or less, more preferably ± 0.5% or less.
    [4] [Patent Document 1]
    [5] Japanese Patent Publication Hei 6-28258
    [6] The resistive heating element formed on the surface or inside of the ceramic heater is designed and arranged in a pattern so as to uniformly heat the surface on which the wafer is loaded. That is, in order to improve the cracking property of the wafer surface, it is conceivable to arrange the resistance heating body densely by narrowing the distance between the line width of the resistance heating body and the adjacent resistance heating.
    [7] However, if the wiring spacing of the resistive heating element is made too narrow while focusing on the improvement of the crackability of the wafer surface, a partial discharge phenomenon occurs due to the potential difference between the wirings of the resistive heating element, and if this progresses further, a short circuit occurs between the wirings of the resistive heating element. This leads to damage to the ceramic heater.
    [1] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic heater used for a semiconductor manufacturing apparatus that performs a predetermined process on a wafer in a semiconductor manufacturing process, and holds and heats a wafer.
    [14] 1A and 1B are cross-sectional views schematically showing a cross section of a resistive heating element in a ceramic heater, FIG. 1A shows an actual cross section of a resistive heating element, and FIG. 1B is a diagram showing an ideal resistive heating element cross section.
    [15] 2 is a schematic cross-sectional view showing one specific example of the ceramic heater according to the present invention.
    [16] 3 is a schematic cross-sectional view showing another specific example of the ceramic heater according to the present invention.
    [8] SUMMARY OF THE INVENTION In view of such a conventional situation, the present invention optimizes the pattern design of a resistance heating element, thereby preventing damage due to a short circuit between resistance heating elements at the time of heat treatment while maintaining the cracking property of the wafer surface. It is an object to provide a ceramic heater.
    [9] In order to achieve the above object, the present invention is a ceramic heater for a semiconductor manufacturing apparatus having a resistance heating element on the surface or inside of a ceramic substrate, the minimum angle formed by the bottom surface and side surfaces of the resistance heating element in the cross section of the resistance heating element is 5 ° The ceramic heater for semiconductor manufacturing apparatuses characterized by the above is provided.
    [10] In the ceramic heater for a semiconductor manufacturing apparatus of the present invention, when the wafer is placed on a wafer mounting surface and energized and heated by a resistance heating element, the variation of the wafer surface temperature is ± 1.0% or less in the use temperature, preferably ± 0.5% It is characterized by the following.
    [11] In the ceramic heater for semiconductor manufacturing apparatus of the said invention, it is preferable that the said ceramic substrate consists of at least 1 sort (s) chosen from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide. In particular, it is preferable that the ceramic substrate is aluminum nitride or silicon carbide having a thermal conductivity of 100 W / m · K or higher.
    [12] Moreover, in the ceramic heater for semiconductor manufacturing apparatus of the said invention, it is preferable that the said resistance heating body consists of at least 1 sort (s) chosen from tungsten, molybdenum, platinum, palladium, silver, nickel, and chromium.
    [13] In addition, in the ceramic heater for a semiconductor manufacturing apparatus of the present invention, a plasma electrode may be further disposed on the surface or inside of the ceramic substrate.
    [17] The inventors studied in detail the phenomenon that damage such as cracking occurs in the ceramic heater when the heating is conducted by heating the resistance heating element of the ceramic heater in detail. As a result, the wiring of the resistance heating elements adjacent to each other is short-circuited to the site with the highest potential difference. It discovered that the heater was destroyed.
    [18] In order to avoid such a short circuit phenomenon in the resistive heating element, the inventors have focused on the cross section shape of the resistive heating element, in particular, the angle between the bottom surface and the side surface in the wiring cross section (hereinafter simply referred to as the resistive heating element cross section) of the resistive heating element. That is, the occurrence of such a short circuit is determined by the distance between the wirings of the resistance heating element, the applied voltage, the electrode shape, and the atmospheric pressure. Here, the distance between wirings is limited by the pattern design of the resistance heating element in order to obtain cracking properties of the heater, and the applied voltage and the atmospheric pressure are determined by the processing conditions.
    [19] On the other hand, when the distance between wirings of the resistive heating element was made constant, it was found that short circuits were hardest to occur when the wiring cross sections were square and rectangular, and short circuits were most likely to occur when acicular. Therefore, by devising the cross-sectional shape of the resistive heating element of the ceramic heater, it is thought that the crack due to a short circuit can be prevented, and the method is examined.
    [20] The resistance heating element of the ceramic heater is generally formed by printing and baking a conductive paste on a ceramic sintered body or a green sheet. Although the cross-sectional shape of the resistance heating element obtained in this way is typically shown, it is ideally shown as the resistance heating element 3b having a rectangular cross-sectional shape as shown in FIG. 1B. Like 1a, the resistive heating element 3a has an approximately trapezoidal shape having an inclined side surface, and the minimum angle θ formed between the bottom surface and the side surface of the resistive heating element 3a in contact with the ceramic substrate 2 becomes an acute angle.
    [21] Therefore, in the cross section of the resistive heating element shown in Fig. 1B, the distance L between the wirings of the resistive heating element 3a is changed within the range of 0.5 to 20 mm, and the minimum angle θ formed between the bottom surface and the side surface thereof. Was gradually increased from 2 ° and the presence or absence of a short circuit between wirings was checked when the resistance heating element was energized and heated. As a result, it was found that the short circuit between the wirings can be avoided by setting the minimum angle θ formed between the bottom surface and the side surface to 5 ° or more in the resistance heating element end face regardless of the distance L between wirings.
    [22] Further, in the method of changing the minimum angle θ formed between the bottom surface and the side surface of the resistive heating element cross section, a method such as changing the paste dilution to change the paste viscosity when printing and applying the paste for forming the resistive heating element may be employed. Can be.
    [23] In the ceramic heater of the present invention, even if the minimum angle θ formed between the bottom surface and the side surface of the resistance heating element is 5 ° or more, if the distance L between the wirings of the resistance heating element is too small, that is, the distance between wirings is generally ( If L) is less than 0.1 mm, attention is required because short circuits easily occur between the wirings.
    [24] As described above, in the ceramic heater of the present invention in which the minimum angle θ formed between the bottom surface and the side surface of the resistance heating element cross section is 5 ° or more, the fluctuation (crackability) of the wafer surface temperature is used when the resistance heating element is energized. The temperature is preferably ± 1.0% or less, more preferably ± 0.5% or less.
    [25] However, if the distance L between wirings of the resistive heating element is too large, the fluctuation of the wafer surface temperature increases when the resistive heating element is energized and heated, which makes it difficult to achieve the desired crackability. In consideration of this point, it is preferable that the distance L between wirings of the resistance heating element is 5 mm or less.
    [26] Next, the specific structure of the ceramic heater according to the present invention will be described with reference to Figs. In the ceramic heater 1 shown in Fig. 2, a resistive heating element 3 having a predetermined wiring pattern is provided on the surface of the ceramic substrate 2a, and the other ceramic substrate 2b is made of glass or ceramic on the surface thereof. It is bonded by the contact bonding layer 4 which consists of. Moreover, the wiring width of the wiring pattern of the resistance heating body 3 becomes like this. Preferably it is 5 mm or less, More preferably, it is 1 mm or less.
    [27] In addition, the ceramic heater 11 shown in FIG. 3 is provided with the plasma electrode 15 like the resistance heating element 13 inside. That is, like the ceramic heater of FIG. 2, the ceramic substrate 12a and the ceramic substrate 12b having the resistance heating element 13 on the surface are bonded to each other by the adhesive layer 14a, and the other surface of the ceramic substrate 12a. Another ceramic substrate 12c having the plasma electrode 15 provided thereon is joined by an adhesive layer 14b made of glass or ceramic.
    [28] In the manufacture of the ceramic heater shown in Figs. 2 and 3, in addition to the method of joining the respective ceramic substrates, a green sheet having a thickness of about 0.5 mm is prepared, and a conductive paste is formed on each green sheet by a resistive heating element and / or Alternatively, after printing and coating the circuit pattern of the plasma electrode, such a green sheet and a conventional green sheet may be laminated so as to obtain a required thickness as necessary, and may be sintered and integrated at the same time.
    [29] Example
    [30] <First Embodiment>
    [31] A sintering aid and a binder were added to the aluminum nitride (AlN) powder and dispersed and mixed by a ball mill. After spray-drying this mixed powder, it press-molded into the disk shape of diameter 380mm and thickness 1mm. The molded article thus obtained was degreased at a temperature of 800 ° C. in a non-oxidizing atmosphere, and then sintered at a temperature of 1900 ° C. for 4 hours to obtain an AlN sintered body. The thermal conductivity of this AlN sintered compact was 170 W / mK. The outer circumferential surface of the AlN sintered compact was polished to an outer diameter of 300 mm to prepare two AlN substrates for ceramic heaters.
    [32] On the surface of one AlN substrate, a paste kneaded with tungsten powder and a sintering aid with a binder was printed and applied to form a wiring pattern of a predetermined resistance heating element. At that time, by changing the printing screen or paste viscosity, the minimum angle θ (hereinafter referred to as cross section minimum angle θ) between the bottom surface and the side surface of the resistance heating element in the cross section of the resistance heating element and the distance between adjacent wirings (L) was changed. Thereafter, the AlN substrate was degreased at a temperature of 800 ° C. in a non-oxidizing atmosphere, and then fired at a temperature of 1700 ° C. to form a resistive heating element of W.
    [33] Further, a paste kneaded with a Y 2 O 3 -based adhesive and a binder was printed on the surface of the remaining AlN substrate and degreased at a temperature of 500 ° C. The adhesive layer of this AlN substrate was polymerized on the surface on which the resistive heating element of the AlN substrate was formed and heated to a temperature of 800 deg. In this way, ceramic heaters of respective samples having the structures of FIGS. 1A and 1B and differing in the distance L between wires and the minimum cross-sectional angle θ as shown in Table 1 were manufactured.
    [34] The ceramic heater of each sample obtained in this way was heated up to 500 ° C. by heating a current to the resistance heating element at a voltage of 200 V from the two electrodes formed on the surface opposite to the wafer mounting surface. The occurrence of cracks was investigated. In addition, a silicon wafer having a thickness of 0.8 mm and a diameter of 300 mm was loaded on the wafer mounting surface of the ceramic heater, and the surface temperature distribution thereof was measured to determine cracking properties of the wafer surface at 500 ° C. The results thus obtained are shown in Table 1 below for each sample.
    [35] sampleCross section minimum angle θ (°)Distance between wirings L (mm)Heater cracking frequency (N = 5)500 ℃ Wafer Surface Crack (℃) One7200/5± 1.80 27100/5± 1.31 3750/5± 0.48 47One0/5± 0.40 570.50/5± 0.35 65200/5± 1.80 75100/5± 1.31 8550/5± 0.48 95One0/5± 0.40 1050.50/5± 0.35 11 *4200/5± 1.80 12 *4100/5± 1.31 13 *452/5± 0.48 14 *4One4/5± 0.40 15 *40.55/5± 0.35 16 *2200/5± 1.80 17 *2102/5± 1.31 18 *254/5± 0.48 19 *2One4/5± 0.40 20 *20.55/5± 0.35
    [36] Note: Samples given with * in the table are comparative examples.
    [37] As can be seen from the results shown in Table 1, the heater crack at the time of heating up was eliminated by setting the cross-sectional minimum angle (theta) of a resistance heating body to 5 degrees or more in an aluminum nitride heater. In addition, it was found that the cracking property within ± 0.5% is obtained by setting the distance L between the wirings of the resistance heating element within the range of 0.5 to 5 mm.
    [38] Second Embodiment
    [39] A sintering aid and a binder were added to the silicon nitride (Si 3 N 4 ) powder and dispersed and mixed by a ball mill. After spray-drying this mixed powder, it press-molded into the disk shape of diameter 380mm and thickness 1mm. The molded product was degreased at a temperature of 800 ° C. in a non-oxidizing atmosphere, and then sintered at a temperature of 1550 ° C. for 4 hours to obtain a Si 3 N 4 sintered body. The thermal conductivity of this Si 3 N 4 sintered compact was 20 W / mK. The outer circumferential surface of the Si 3 N 4 sintered compact was polished to an outer diameter of 300 mm to prepare two Si 3 N 4 substrates for ceramic heaters.
    [40] On the surface of one Si 3 N 4 substrate, a paste obtained by kneading a tungsten powder and a sintering aid with a binder was printed and applied to form a wiring pattern of a predetermined resistance heating element. At this time, the cross-sectional minimum angle (theta) of the resistance heating body and the distance between adjacent wirings L were changed in the cross section of the resistance heating body by changing the printing screen and paste viscosity. Thereafter, the Si 3 N 4 substrate was degreased at a temperature of 800 ° C. in a non-oxidizing atmosphere, and then fired at a temperature of 1700 ° C. to form a resistive heating element of W.
    [41] In addition, a paste obtained by kneading a SiO 2 adhesive and a binder was printed on the surface of the remaining one Si 3 N 4 substrate and degreased at a temperature of 500 ° C. The Si 3 N 4 were polymerized in the layer of adhesive on one surface of the substrate to form a resistance heating of the Si 3 N 4 substrate and bonded by heating to a temperature 800 ℃. In this way, ceramic heaters of the respective samples having the structures shown in FIGS. 1A and 1B and differing in the distance L between wirings and the minimum cross-sectional angle θ as shown in Table 2 were prepared.
    [42] Thus, the ceramic heater of each sample obtained by making a current flow through a resistance heating element at the voltage of 200V, the temperature of the ceramic heater was heated up to 500 degreeC, and the presence or absence of the crack generation of the ceramic heater was investigated. In addition, a silicon wafer having a thickness of 0.8 mm and a diameter of 300 mm was loaded on the wafer mounting surface of the ceramic heater, and the surface temperature distribution thereof was measured to determine cracking properties of the wafer surface at 500 ° C. The results thus obtained are shown in Table 2 below for each sample.
    [43] sampleCross section minimum angle θ (°)Distance between wirings L (mm)Heater cracking frequency (N = 5)500 ℃ Wafer Surface Crack (℃) 217200/5± 2.85 227100/5± 2.50 23750/5± 0.91 247One0/5± 0.81 2570.50/5± 0.67 265200/5± 2.85 275100/5± 2.50 28550/5± 0.91 295One0/5± 0.81 3050.50/5± 0.67 31 *4200/5± 2.85 32 *4100/5± 2.50 33 *451/5± 0.91 34 *4One3/5± 0.81 35 *40.54/5± 0.67 36 *2200/5± 2.85 37 *2102/5± 2.50 38 *254/5± 0.91 39 *2One5/5± 0.81 40 *20.55/5± 0.67
    [44] Note: Samples given with * in the table are comparative examples.
    [45] As can be seen from the above Table 2, even in the ceramic heater made of silicon nitride, by setting the minimum cross-sectional angle θ of the resistance heating element to 5 ° or more, the heater crack of the heating and heating is heated as in the case of the aluminum nitride of the first embodiment. I could get rid of it. Furthermore, the crackability within ± 1.0% was obtained by setting the distance L between the wirings of the resistance heating element to within the range of 0.5 to 5 mm.
    [46] Third Embodiment
    [47] A sintering aid and a binder were added to the aluminum oxynitride (AlON) powder and dispersed and mixed by a ball mill. After spray-drying this mixed powder, it press-molded into the disk shape of diameter 380mm and thickness 1mm. The molded product was degreased at a temperature of 800 deg. C in a non-oxidizing atmosphere, and then sintered at a temperature of 1770 deg. The thermal conductivity of this AlON sintered compact was 20 W / mK. The outer peripheral surface of the AlON sintered body thus obtained was polished to an outer diameter of 300 mm to prepare two AlON substrates for ceramic heaters.
    [48] On the surface of one AION substrate, a paste obtained by kneading tungsten powder and a sintering aid with a binder was printed and applied to form a wiring pattern of a predetermined resistance heating element. At this time, the cross-sectional minimum angle (theta) of the resistance heating body and the distance between adjacent wirings L were changed in the cross section of the resistance heating body by changing the printing screen and paste viscosity. Thereafter, the AlON substrate was degreased at a temperature of 800 ° C. in a non-oxidizing atmosphere, and then fired at a temperature of 1700 ° C. to form a resistance heating element of W, respectively.
    [49] Further, a paste obtained by kneading a SiO 2 adhesive and a binder was printed on the surface of the remaining AlON substrate and degreased at a temperature of 500 ° C. The adhesive layer of this AlON substrate was polymerized on the surface on which the resistive heating element of the AlON substrate was formed, and was heated and bonded to a temperature of 800 ° C. Thus, as shown in Table 3 below, ceramic heaters of each sample having the structures shown in FIGS. 1A and 1B and having different distances between wirings (L) and cross-sectional minimum angles (θ) as shown in Table 3 were manufactured. It was.
    [50] Thus, the ceramic heater of each sample obtained by making a current flow through a resistance heating element at the voltage of 200V, the temperature of the ceramic heater was heated up to 500 degreeC, and the presence or absence of the crack generation of the ceramic heater was investigated. In addition, a silicon wafer having a thickness of 0.8 mm and a diameter of 300 mm was loaded on the wafer mounting surface of the ceramic heater, and the surface temperature distribution thereof was measured to determine cracking properties of the wafer surface at 500 ° C. The results thus obtained are shown in Table 3 below for each sample.
    [51] sampleCross section minimum angle θ (°)Distance between wirings L (mm)Heater cracking frequency (N = 5)500 ℃ Wafer Surface Crack (℃) 417200/5± 2.85 427100/5± 2.50 43750/5± 0.91 447One0/5± 0.81 4570.50/5± 0.67 465200/5± 2.85 475100/5± 2.50 48550/5± 0.91 495One0/5± 0.81 5050.50/5± 0.67 51 *4200/5± 2.85 52 *4100/5± 2.50 53 *453/5± 0.91 54 *4One4/5± 0.81 55 *40.55/5± 0.67 56 *2200/5± 2.85 57 *2102/5± 2.50 58 *254/5± 0.91 59 *2One5/5± 0.81 60 *20.55/5± 0.67
    [52] Note: Samples given with * in the table are comparative examples.
    [53] As can be seen from the above Table 2, even in the ceramic heater made of aluminum oxynitride, by setting the minimum cross-sectional angle (θ) of the resistance heating element to 5 ° or more, the heater of heating and heating as in the case of the aluminum nitride of the first embodiment The cracks could be removed. Furthermore, the crackability within ± 1.0% was obtained by setting the distance L between the wirings of the resistance heating element to within the range of 0.5 to 5 mm.
    [54] Fourth Example
    [55] By the same method as in the first embodiment, two AlN substrates for ceramic heaters having an outer diameter of 300 mm made of an aluminum nitride sintered body were manufactured. Next, in manufacturing a ceramic heater using these two AlN substrates, the material of the resistive heating element provided on the surface of one AlN substrate was changed to Mo, Pt, Ag-Pd, and Ni-Cr. Except for the same manner as in the first embodiment, a resistive heating element of W having different distance L between wires and minimum cross-sectional angle θ, respectively, was formed.
    [56] Next, a SiO 2 based laminated glass was applied to the surface of the remaining AlN substrate and degreased at a temperature of 800 ° C. in a non-oxidizing atmosphere. As shown in Table 4 below, the laminated glass layer of the AlN substrate was polymerized on the surface on which the resistive heating element of the AlN substrate was formed, and then heated and bonded at a temperature of 800 ° C., as shown in Table 4 below, the inter-wire distance L and the minimum cross-sectional angle (θ). The ceramic heater made from AlN of each sample with different) was obtained.
    [57] Thus, the ceramic heater of each sample obtained by making a current flow through a resistance heating element at the voltage of 200V, the temperature of the ceramic heater was heated up to 500 degreeC, and the presence or absence of the crack generation of the ceramic heater was investigated. In addition, a silicon wafer having a thickness of 0.8 mm and a diameter of 300 mm was loaded on the wafer mounting surface of the ceramic heater, and the surface temperature distribution thereof was measured to determine cracking properties of the wafer surface at 500 ° C. The results thus obtained are shown in Table 4 below for each sample.
    [58] sampleHeating elementCross section minimum angle θ (°)Distance between wirings L (mm)Heater cracking frequency (N = 5)Crackability of wafer surface at 500 ℃ (℃) 61Mo7100/5± 1.28 62Mo70.50/5± 0.35 63Mo5100/5± 1.28 64Mo550/5± 0.45 65Mo5One0/5± 0.37 66Mo50.50/5± 0.35 67 *Mo4100/5± 1.28 68 *Mo4One2/5± 0.37 69 *Mo40.55/5± 0.35 70Pt7100/5± 1.28 71Pt70.50/5± 0.35 72Pt5100/5± 1.28 73Pt550/5± 0.45 74Pt5One0/5± 0.37 75Pt50.50/5± 0.35 76 *Pt4100/5± 1.28 77 *Pt4One4/5± 0.37 78 *Pt40.54/5± 0.35 79Ag-Pd7100/5± 1.28 80Ag-Pd70.50/5± 0.35 81Ag-Pd5100/5± 1.28 82Ag-Pd550/5± 0.45 83Ag-Pd5One0/5± 0.37 84Ag-Pd50.50/5± 0.35 85 *Ag-Pd4100/5± 1.28 86 *Ag-Pd4One3/5± 0.37 87 *Ag-Pd40.54/5± 0.35 88Ni-Cr7100/5± 1.28 89Ni-Cr70.50/5± 0.35 90Ni-Cr5100/5± 1.28 91Ni-Cr550/5± 0.45 92Ni-Cr5One0/5± 0.37 93Ni-Cr50.50/5± 0.35 94 *Ni-Cr4100/5± 1.28 95 *Ni-Cr4One3/5± 0.37 96 *Ni-Cr40.55/5± 0.35
    [59] Note: Samples given with * in the table are comparative examples.
    [60] As shown in Table 4 above, even in the case of the aluminum nitride ceramic heater consisting of Mo, Pt, Ag-Pd, and Ni-Cr, as in the case of the resistive heating element of W shown in the first embodiment, By setting cross-sectional minimum angle (theta) to 5 degrees or more, the heater one crack of heating temperature rising was able to be eliminated. Moreover, the crackability within ± 0.5% was obtained by setting the distance L between the wirings of the resistance heating element to be in the range of 0.5 to 5 mm.
    [61] Fifth Embodiment
    [62] Using a paste obtained by kneading an aluminum nitride (AlN) powder with a sintering aid, a binder, a dispersant, and an alcohol, a molding was performed by the doctor blade method to obtain a green sheet having a thickness of about 0.5 mm.
    [63] Next, after drying this green sheet at 80 degreeC for 5 hours, the paste which knead | mixed tungsten powder and a sintering aid with the binder was apply-coated on the surface of one green sheet, and the resistance heating body layer of a predetermined wiring pattern was formed. At this time, the cross-sectional minimum angle (theta) of the resistance heating body and the distance between adjacent wirings L were changed in the cross section of the resistance heating body by changing the printing screen and paste viscosity.
    [64] In addition, the other green sheet was similarly dried, and the tungsten paste was printed and coated on the surface to form a plasma electrode layer. A total of 50 sheets of the green sheet having these two conductive layers and the green sheet on which the conductive layer was not printed were laminated, and were heated and integrated at 140 ° C. while 70 kg / cm 2 applied a pressure.
    [65] The laminate thus obtained was degreased at 600 ° C. for 5 hours in a non-oxidizing atmosphere, and then hot-pressed at a pressure of 100 to 150 kg / cm 2 and a temperature of 1800 ° C. to obtain an AlN plate-shaped body having a thickness of 3 mm. This was cut out into a disk shape having a diameter of 380 mm, and the outer peripheral portion thereof was polished to a diameter of 300 mm. In this manner, the ceramic heater of each sample having the structure of FIG. Was prepared.
    [66] Thus, the ceramic heater of each sample obtained by making a current flow through a resistance heating element at the voltage of 200V, the temperature of the ceramic heater was heated up to 500 degreeC, and the presence or absence of the crack generation of the ceramic heater was investigated. In addition, a silicon wafer having a thickness of 0.8 mm and a diameter of 300 mm was loaded on the wafer mounting surface of the ceramic heater, and the surface temperature distribution thereof was measured to determine cracking properties of the wafer surface at 500 ° C. The results thus obtained are shown in Table 5 below for each sample.
    [67] sampleCross section minimum angle θ (°)Distance between wirings L (mm)Heater cracking frequency (N = 5)500 ℃ Wafer Surface Crack (℃) 977200/5± 1.86 987100/5± 1.29 99750/5± 0.47 1007One0/5± 0.41 10170.50/5± 0.36 1025200/5± 1.86 1035100/5± 1.29 104550/5± 0.47 1055One0/5± 0.41 10650.50/5± 0.36 1074200/5± 1.86 1084100/5± 1.29 109454/5± 0.47 1104One4/5± 0.41 11140.54/5± 0.36 1122200/5± 1.86 1132100/5± 1.29 114254/5± 0.47 1152One5/5± 0.41 11620.55/5± 0.36
    [68] As can be seen from the results shown in Table 5 above, even in a ceramic heater made of aluminum nitride having a resistive heating element and a plasma electrode, the heater crack of heating and heating can be removed by setting the minimum cross-sectional angle (θ) of the resistive heating element to 5 ° or more. I could get rid of it. Moreover, the crackability within ± 0.5% was obtained by setting the distance L between the wirings of the resistance heating element to be in the range of 0.5 to 5 mm.
    [69] According to the present invention, by optimizing the angle formed between the bottom surface and the side surface of the resistive heating element cross section, the semiconductor manufacturing apparatus for the semiconductor manufacturing apparatus without damage due to short circuit between the resistive heating elements during the heat treatment while maintaining cracking property of the wafer surface It is possible to provide a ceramic heater.
    权利要求:
    Claims (7)
    [1" claim-type="Currently amended] A ceramic heater for a semiconductor manufacturing apparatus having a resistance heating element on the surface or inside of a ceramic substrate, wherein a minimum angle formed between the bottom surface and the side surface of the resistance heating element in a cross section of the resistance heating element is 5 ° or more. heater.
    [2" claim-type="Currently amended] The ceramic heater according to claim 1, wherein a variation in wafer surface temperature is ± 1.0% or less in use temperature when the wafer is placed on a wafer mounting surface and energized and heated by a resistance heating element.
    [3" claim-type="Currently amended] The ceramic heater according to claim 2, wherein the variation of the wafer surface temperature is ± 0.5% or less at the use temperature.
    [4" claim-type="Currently amended] The ceramic heater according to any one of claims 1 to 3, wherein the ceramic substrate is made of one kind selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
    [5" claim-type="Currently amended] The ceramic heater according to any one of claims 1 to 4, wherein the ceramic substrate is aluminum nitride or silicon carbide having a thermal conductivity of 100 W / m · K or higher.
    [6" claim-type="Currently amended] The ceramic heater according to any one of claims 1 to 5, wherein the resistance heating element is one selected from tungsten, molybdenum, platinum, palladium, silver, nickel, and chromium.
    [7" claim-type="Currently amended] The ceramic heater according to any one of claims 1 to 4, wherein a plasma electrode is further disposed on or in the surface of the ceramic substrate.
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    同族专利:
    公开号 | 公开日
    TW200411768A|2004-07-01|
    JP2004146569A|2004-05-20|
    WO2004039129A1|2004-05-06|
    CN1613275A|2005-05-04|
    KR100611281B1|2006-08-10|
    TWI236064B|2005-07-11|
    US20050241584A1|2005-11-03|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-10-24|Priority to JPJP-P-2002-00309388
    2002-10-24|Priority to JP2002309388A
    2003-03-20|Application filed by 스미토모덴키고교가부시키가이샤
    2003-03-20|Priority to PCT/JP2003/003483
    2004-08-06|Publication of KR20040070293A
    2006-08-10|Application granted
    2006-08-10|Publication of KR100611281B1
    优先权:
    申请号 | 申请日 | 专利标题
    JPJP-P-2002-00309388|2002-10-24|
    JP2002309388A|JP2004146569A|2002-10-24|2002-10-24|Ceramic heater for semiconductor manufacturing device|
    PCT/JP2003/003483|WO2004039129A1|2002-10-24|2003-03-20|Ceramics heater for semiconductor production system|
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